It offers silicon carbide and GaN materials, including silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers to manufacture products for RF, power ...

It offers silicon carbide and GaN materials, including silicon carbide bare wafers and GaN epitaxial layers on silicon carbide wafers. On January 22nd, Christopher Rolland of Susquehanna ...

However, the SiC race is also a geopolitical one. "The US, EU, and Japan dominate SiC semiconductor production, but China has strategically increased silicon carbide bare wafer production to alarming ...

kicking off the era of “extra-large” SiC wafers. This demo comes after the release of the world’s first 200-mm (8-inch) liquid-phase low-defect substrate at the Shanghai Semicon China conference in ...

The company planned to make silicon carbide wafers for semiconductors in Rock Hill. In October 2024, the company eliminated 44% of its New York workforce and canceled the Rock Hill expansion.

Managing petabytes of data collected over decades, with exponential growth on the horizon, demands a mission-critical focus on cyber resilience. In an era where data fuels discovery, the Ocean ...

The ambitious project pegged at an investment of INR140 billion (US$1.62 billion), will focus on the production of silicon carbide (SiC ... to produce 10,000 wafers per month, is expected to ...

The move is intended to optimise and further diversify Infineon’s manufacturing footprint, and the first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will ...

"Our current fiscal year forecast includes contemplated orders and revenue yet to be booked for silicon carbide wafer level burn-in systems and WaferPaks destined for silicon carbide manufacturers ...

The Sillicon Carbide (SiC) fab facility will begin with a production capacity of 10,000 wafers per month, ramping up to 50,000 wafers within 2-3 years. The MoU was signed between managing director ...

SweGaN specializes in the production of materials for power devices, such as Gallium Nitride on Silicon Carbide (GaN-on-SiC) wafers, which are essential for high-performance electronics. “As part of ...